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| SMD Type NPN Transistor 2SC1815 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Features Power dissipation +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 125 -55 to 125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cut to off current Collector cut to off current Emitter cut to off current DC current gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Ic= 100 A, IE=0 Testconditons Min 60 50 0.1 0.1 0.1 130 400 0.25 1 80 V V MHz Typ Max Unit V V A A A Ic= 0.1mA, IB=0 VCB=60V, IE=0 VCE=50V, IB=0 VEB= 5V, IC=0 VCE= 6V, IC= 2mA IC=100 mA, IB= 10mA IC=100 mA, IB= 10mA VCE=10V, IC= 1mA,f=30MHz hFE Classification Marking Rank hFE 130 L 200 200 HF H 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC1815 Typlcal Characteristics Transistors IC Fig.1 Collector Emitter Voltage Fig.2 Collector Current Fig.3 Collector Current Fig.4Collector Current Fig.5 Ambient Temperature Fig.6 Emitter Current 2 www.kexin.com.cn |
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